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  Datasheet File OCR Text:
 DC COMPONENTS CO., LTD.
R
TIP41C
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and switching applications.
TO-220AB
Pinning
1 = Base 2 = Collector 3 = Emitter
.625(15.87) .570(14.48)
.405(10.28) .380(9.66)
.185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation(TC=25 C) Total Power Dissipation Junction Temperature Storage Temperature
o
.350(8.90) .330(8.38) 123
.640 Typ (16.25)
Symbol VCBO VCEO IC PD PD TJ TSTG
Rating 100 100 6 65 2 +150 -55 to +150
Unit V V A W W
o o
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 Typ (2.54)
.024(0.60) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO ICES ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2%
Min 100 100 30 15 3
Typ -
Max 400 700 1 1.5 2 75 -
Unit V V A A mA V V MHz
Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 VCE=100V, IB=0 VCE=60V, IB=0 VEB=5V, IC=0 IC=6A, IB=0.6A IC=6A, VCE=4V IC=0.3A, VCE=4V IC=3A, VCE=4V IC=0.5A, VCE=10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain
(1) (1)
Transition Frequency (1)Pulse Test: Pulse Width
Classification of hFE2
Rank Range A 15~50 B 40~75


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